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New components for future computer memories |
November 04, 2011
The European TRAMS (terascale reliable adaptive memory systems) consortium investigates the impact of statistical NanoCMOS variability on terascale embedded static random-access memories (SRAMs) based on sub-16 nm technology generation using conventional and novel complementary metal-oxide semiconductor (CMOS) devices.
Link: http://www.sciencedaily.com/releases/2011/11/111103081338.htm
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