| Home : July 11 2014 Computer News : Silicon oxide for better computer memory: Use of porous silicon oxide reduces forming voltage, improves manufacturability |
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Silicon oxide for better computer memory: Use of porous silicon oxide reduces forming voltage, improves manufacturability |
July 11, 2014
A breakthrough silicon oxide technology for high-density, next-generation computer memory is one step closer to mass production, thanks to a refinement that will allow manufacturers to fabricate devices at room temperature with conventional production methods.
Link: http://feeds.sciencedaily.com/~r/sciencedaily/computers_math/computer_science/~3/4PrTLcJldU0/140710131018.htm
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